Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC-Reference-Cited by-同舟云学术

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Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC

Published:2020-07 Issue: Volume:142 Page:109448
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Igumbor E.,Dongho-Nguimdo G.M.,Mapasha R.E.,Omotoso E.,Meyer W.E.

Funder

National Research foundation (NRF) of South Africa

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference55 articles.

1. High performance of high-voltage 4H-SiC Schottky barrier diodes

2. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

3. The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes

4. Recombination centers in 4H-SiC investigated by electrically detected magnetic resonance and ab initio modeling

5. Comparison of 3C–SiC, 6H–SiC and 4H–SiC MESFETs performances

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Donor-induced electrically charged defect levels: examining the role of indium and n-type defect-complexes in germanium;Journal of Computational Electronics;2024-06-18

2. The effects of defects on the defect formation energy, electronic band structure, and electron mobility in 4H–SiC;AIP Advances;2022-06-01

3. First-principles study of In and Mn dopants on the magnetic and optical properties of 4H–SiC;Journal of Luminescence;2021-11

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