The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes

Author:

Omotoso E.,Meyer W.E.,van Rensburg P.J. Janse,Igumbor E.,Tunhuma S.M.,Ngoepe P.N.M.,Danga H.T.,Auret F.D.

Funder

National Research Foundation

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference25 articles.

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2. The double Gaussian distribution of barrier heights in Au/ n -GaAs Schottky diodes from I – V – T characteristics;Özdemir;Semicond. Sci. Technol.,2006

3. Metal-Semiconductor Contacts;Rhoderick,1988

4. Study of current-voltage-temperature (I-V-T) and capacitance-voltage-temperature (C-V-T) characteristics of molybdenum Schottky contacts on n-InP (1 0 0);Janardhanam,2009

5. Study of barrier inhomogeneities using I-V–T characteristics of Mo/4H–SiC Schottky diode;Ouennoughi;Physica B,2015

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