Study of barrier inhomogeneities using I–V–T characteristics of Mo/4H–SiC Schottky diode-Reference-Cited by-同舟云学术

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Study of barrier inhomogeneities using I–V–T characteristics of Mo/4H–SiC Schottky diode

Published:2015-01 Issue: Volume:456 Page:176-181
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Ouennoughi Z.,Toumi S.,Weiss R.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference47 articles.

1. Metal-Semiconductor Contacts;Rhoderick,1988

2. S.M. Sze, Physics of Semiconductor Devices, Wiley-Interscience, New York, vol. 26 (135) 1981

3. D.K. Schroder, Semiconductor Material and Device Characterization, A. John Wiley & Sons, Inc., New Jersey, 1981, p. 127

4. Origin of the Excess Capacitance at Intimate Schottky Contacts

5. Barrier inhomogeneities at Schottky contacts

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