Origin of the Excess Capacitance at Intimate Schottky Contacts
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.60.53/fulltext
Reference15 articles.
1. Vereinfachte und erweiterte Theorie der Randschicht-gleichrichter
2. Surface States and Rectification at a Metal Semi-Conductor Contact
3. Schottky Barrier Heights and the Continuum of Gap States
4. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
5. Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces
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