1.2-kV Low-Barrier 4H-SiC JBS Diodes by Virtue of P-Implants Across Dead Field of Current Flow
Author:
Affiliation:
1. Academy for Engineering and Technology, Fudan University, Shanghai, China
Funder
Science and Technology Commission of Shanghai Municipality
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10194493/10155146.pdf?arnumber=10155146
Reference36 articles.
1. Barrier height tuning in Ti/4H-SiC Schottky diodes
2. 1.2-kV 4H-SiC Merged PiN Schottky Diode With Improved Surge Current Capability
3. Controlling 4H–SiC Schottky Barriers by Molybdenum and Molybdenum Nitride as Contact Materials
4. Single and repetitive surge current events of 3.3 kV-20 A 4H-SiC JBS rectifiers: the impact of the anode layout
5. Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4 H -silicon carbide
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