Carrier removal rates in 4H–SiC power diodes – A predictive analytical model

Author:

Siddiqui Aamenah,Hallén Anders,Hussain Arshad,Usman MuhammadORCID

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference42 articles.

1. Silicon Carbide for Space Power Applications;Bausier,2014

2. Radiation tolerance comparison of silicon and 4H–SiC Schottky diodes;Siddiqui;Mater. Sci. Semicond. Process.,2021

3. Advanced DC/DC Converters towards Higher Volumetric Efficiencies for Space Applications;Shaw,2005

4. Modeling solar cell degradation in space: a comparison of the NRL displacement damage dose and the JPL equivalent fluence approaches;Messenger;Prog. Photovoltaics Res. Appl.,2001

5. Application of displacement damage dose analysis to low-energy protons on silicon devices;Messenger;IEEE Trans. Nucl. Sci.,2002

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