Author:
Lin Ya-Xun,Chao Der-Sheng,Liang Jenq-Horng,Jiang Jheng-Yi,Huang Chih-Fang
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference43 articles.
1. Review of silicon carbide power devices and their applications;She;IEEE Trans. Ind. Electron.,2017
2. Overview of 1.2 kV–2.2 kV SiC MOSFETs targeted for industrial power conversion applications;Bolotnikov,2015
3. Displacement damage effects in irradiated semiconductor devices;Srour;IEEE Trans. Nucl. Sci.,2013
4. Review of displacement damage effects in silicon devices;Srour;IEEE Trans. Nucl. Sci.,2003
5. Total ionizing dose effects in MOS oxides and devices;Oldham;IEEE Trans. Nucl. Sci.,2003
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献