Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC-Reference-Cited by-同舟云学术

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Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC

Published:2019-05 Issue:5 Volume:9 Page:055308
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Weiße J.¹^ORCID,Hauck M.²^ORCID,Krieger M.²^ORCID,Bauer A. J.³,Erlbacher T.³^ORCID

Affiliation:

1. Chair of Electron Devices, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Cauerstrasse 6, 91058 Erlangen, Germany

2. Lehrstuhl für Angewandte Physik, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Staudtstrasse 7, 91058 Erlangen, Germany

3. Fraunhofer Institute of Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5096440

Reference16 articles.

1. Superjunction Power Devices, History, Development, and Future Prospects

2. Fundamentals of Silicon Carbide Technology

3. Electrical properties of n- and p-type 4H-SiC formed by ion implantation into high-purity semi-insulating substrates

4. Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices

5. Doping of SiC by Implantation of Boron and Aluminum

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Very High In‐Plane Magnetic Field Sensitivity in Ion‐Implanted 4H‐SiC PIN Diodes;Advanced Electronic Materials;2024-03-27

2. Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers;Scientific Reports;2023-11-04

3. Aluminum Acceptor Ionization Energies in 4H-SiC for Low Dose, Ultra-High Energy (> 1MeV) Implants;Materials Science Forum;2022-05-31

4. Compensation of p-type doping in Al-doped 4H-SiC;Journal of Applied Physics;2022-05-14

5. Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices;Micro;2022-01-10

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