Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices-Reference-Cited by-同舟云学术

Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices

Published:2018-06 Issue: Volume:924 Page:184-187
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Weiße Julietta¹,Hauck Martin²,Sledziewski Tomasz³,Tschiesche Mattias²,Krieger Michael²,Bauer Anton J.⁴,Mitlehner Heinz³,Frey Lothar¹,Erlbacher Tobias¹^ORCID

Affiliation:

1. Friedrich-Alexander-Universität Erlangen

2. Friedrich-Alexander-Universität Erlangen-Nürnberg

3. Fraunhofer IISB

4. Fraunhofer Institute of Integrated Systems and Device Technology (IISB)

Abstract

In this work, we analyze compensating defects which are formed after implantation of aluminum (Al) into n-type 4H-SiC epitaxial layers and subsequent thermal annealing. These defects reduce the expected free charge carrier density by 84% for a low doped layer with [Al]impl≈ 9·1016cm-3and by 27 % for a high doped layer with [Al]impl≈ 2·1019cm-3. Furthermore, an electrical activation ratio of implanted aluminum ions of 100 % is calculated. The ionization energy of implanted aluminum as measured by Hall effect and admittance spectroscopy ranges from 101 meV to 305 meV depending on the doping concentration.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.924.184.pdf

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