Aluminum Acceptor Ionization Energies in 4H-SiC for Low Dose, Ultra-High Energy (> 1MeV) Implants

Author:

Hitchcock Collin1,Ghandi Reza1,Deeb Peter1,Kennerly Stacey1,Torky Mohamed2,Chow T. Paul2

Affiliation:

1. GE Research Center

2. Rensselaer Polytechnic Institute

Abstract

MeV level aluminum implants into 4H-SiC were performed as part of superjunction diode fabrication. Measurement of resistance test structures produced resistivities well above expected values with large decreases at elevated temperatures. Capacitance-voltage measurements indicate a high activation rate of the implanted aluminum. Temperature dependent Hall measurements produce reasonable hole mobilities with acceptor ionization energies of approximately 330meV, well above the 200meV expected for low concentration aluminum doping in 4H-SiC.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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