Incomplete ionization in aluminum-doped 4H-silicon carbide-Reference-Cited by-同舟云学术

Incomplete ionization in aluminum-doped 4H-silicon carbide

Published:2019-10-14 Issue:14 Volume:126 Page:145701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Darmody C.¹,Goldsman N.¹

Affiliation:

1. Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20742, USA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5120707

Reference93 articles.

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2. Al, B, and Ga ion-implantation doping of SiC

3. p-Type doping of SiC by high dose Al implantation—problems and progress

4. Y. A. Vodakov, E. N. Mokhov, R. C. Marshall, J. W. Faust, and C. E. Ryan, Silicon Carbide, 1973 (University of South Carolina Press, Columbia, SC, 1974), pp. 508–519.

5. Solubility limits of dopants in 4H–SiC

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