A 4H-SiC JFET with a monolithically integrated temperature sensor-Reference-Cited by-同舟云学术

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A 4H-SiC JFET with a monolithically integrated temperature sensor

Published:2024-08 Issue: Volume:8 Page:100069
ISSN:2772-3704
Container-title:Power Electronic Devices and Components
language:en
Short-container-title:Power Electronic Devices and Components

Author:

Monaghan F.^ORCID,Martinez A.,Evans J.,Fisher C.,Jennings M.

Publisher

Elsevier BV

Reference40 articles.

1. Monolithically integrated temperature sensor in silicon carbide power MOSFETs;Berthou;IEEE Transactions on Power Electronics,2013

2. Integrated lateral SBD temperature sensor of a 4H-SiC VDMOS for real-time temperature monitoring;Chen;IEEE Transactions on Electron Devices,2023

3. Incomplete ionization in aluminum-doped 4H-silicon carbide;Darmody;Journal of Applied Physics,2019

4. Structural and transport properties in alloyed Ti/Al ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature;Frazzetto;Journal of Physics D: Applied Physics,2011

5. Auger recombination in 4H-SiC: Unusual temperature behavior;Galeckas;Applied Physics Letters,1997

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