Integrated Lateral SBD Temperature Sensor of a 4H-SiC VDMOS for Real-Time Temperature Monitoring-Reference-Cited by-同舟云学术

Integrated Lateral SBD Temperature Sensor of a 4H-SiC VDMOS for Real-Time Temperature Monitoring

Published:2023-07 Issue:7 Volume:70 Page:3813-3819
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen Hang¹^ORCID,Zhang Yourun¹^ORCID,He Peng¹,Zhang Yuqiao¹,Chen Shaohua¹,Li Shiyan²,Luo Maojiu¹^ORCID,Li Zehong¹^ORCID,Bai Song²,Zhang Bo¹^ORCID

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Integrated Circuit Science and engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, China

2. State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Devices Institute of China, Nanjing, China

Funder

Major Science and Technology Program of Anhui Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10159202/10144347.pdf?arnumber=10144347

Reference25 articles.

1. V2O5/4H-SiC Schottky Diode Temperature Sensor: Experiments and Model

2. 85–440 K Temperature Sensor Based on a 4H-SiC Schottky Diode

3. 4H-SiC p-i-n diode as Highly Linear Temperature Sensor

4. High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes

5. Simulation of a Novel Integrated 4H-SiC Temperature Sensor

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