Fabrication and Characterization of Kilovolt p-Type SiC JBS Diodes With Enhanced Current Capability and Electroluminescence Phenomenon-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Fabrication and Characterization of Kilovolt p-Type SiC JBS Diodes With Enhanced Current Capability and Electroluminescence Phenomenon

Published:2024-09 Issue:9 Volume:45 Page:1566-1569
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kong Lingxu¹^ORCID,Ren Na¹^ORCID,Wang Rong¹^ORCID,Li Yanjun¹^ORCID,Wang Ce¹^ORCID,Wang Hengyu¹^ORCID,Sheng Kuang¹^ORCID

Affiliation:

1. College of Electrical Engineering, Zhejiang University, Hangzhou, China

Funder

National Key Research and Development Program of China

Beijing Lattice Semiconductor

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/55/10648890/10587149.pdf?arnumber=10587149

Reference28 articles.

1. Review of Silicon Carbide Power Devices and Their Applications

2. A Review of SiC IGBT: Models, Fabrications, Characteristics, and Applications

3. Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method

4. Features of SiC single-crystals grown in vacuum using the LETI method

5. Influence of interfacial energy on the growth of SiC single crystals from high temperature solutions

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP