Influence of interfacial energy on the growth of SiC single crystals from high temperature solutions-Reference-Cited by-同舟云学术

Influence of interfacial energy on the growth of SiC single crystals from high temperature solutions

Published:2023 Issue:4 Volume:25 Page:560-566
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Wang Guobin¹²^ORCID,Sheng Da¹²,Li Hui¹³^ORCID,Zhang Zesheng⁴,Guo Lingling⁵,Guo Zhongnan⁵^ORCID,Yuan Wenxia⁵^ORCID,Wang Wenjun¹³^ORCID,Chen Xiaolong¹³^ORCID

Affiliation:

1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

3. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China

4. Beijing Lattice Semiconductor Co., Ltd., China

5. Department of Chemistry, School of Chemistry and Biological Engineering, University of Science and Technology Beijing, Beijing 100083, China

Abstract

Al addition modifies the interfacial energy of SiC/solution during the growth of SiC single crystals via TSSG, and is beneficial to smoothing the growth surface, improving the crystalline quality, stabilizing the 4H polytype, and increasing the growth rate.

Funder

Beijing Municipal Science and Technology Commission

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CE/D2CE01500E

Reference36 articles.

1. Silicon Carbide as a Platform for Power Electronics

2. SiC—Emerging Power Device Technology for Next-Generation Electrically Powered Environmentally Friendly Vehicles