Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications
2. Features of SiC single-crystals grown in vacuum using the LETI method
3. Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method
4. M. Rasp, personal communication.
5. Investigation of a PVT SiC-Growth Set-up Modified by an Additional Gas Flow
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