Features of SiC single-crystals grown in vacuum using the LETI method-Reference-Cited by-同舟云学术

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Features of SiC single-crystals grown in vacuum using the LETI method

Published:1999-07 Issue: Volume:61-62 Page:77-81
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Rastegaev V.P,Avrov D.D,Reshanov S.A,Lebedev A.O

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference4 articles.

1. Growth of SiC ingots with high ratea

2. V.P. Rastegaev et al., E-MRS1996, Spring Meeting, 4–7 June 1996, Strasbourg (France), Astract A-28.

3. Thermodynamics Features of Individual Matters, Moscow: Nauka;Glushko,1978

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1. Fabrication and Characterization of Kilovolt p-Type SiC JBS Diodes With Enhanced Current Capability and Electroluminescence Phenomenon;IEEE Electron Device Letters;2024-09

2. Physico-chemical Aspects of Growth Processes of Elemental and Compound Semiconductors;Chemistry of Semiconductors;2023-11-24

3. Growth of p-type 4H-SiC single crystals by physical vapor transport using p-type SiC powder;CrystEngComm;2022

4. Silicon carbide;Single Crystals of Electronic Materials;2019

5. Materials Science and Engineering of Bulk Silicon Carbides;SiC Power Materials;2004

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