Recrystallization effects of swift heavy 209 Bi ions irradiation on electrical degradation in 4H-SiC Schottky barrier diode-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Recrystallization effects of swift heavy 209 Bi ions irradiation on electrical degradation in 4H-SiC Schottky barrier diode

Published:2017-06 Issue: Volume:401 Page:51-55
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Yang Zhimei,Ma Yao,Gong Min,Li Yun,Huang Mingmin,Gao Bo,Zhao Xin

Funder

National Natural Science Foundation of China

Heavy Ion Research Facility in Lanzhou

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference20 articles.

1. Electron – irradiation – induced deep levels in n-type 6H–SiC;Gong;J. Appl. Phys.,1999

2. The effect of the electron irradiation on the series resistance of Au/Ni/6H-SiC and Au/Ni/4H-SiC Schottky contacts;Car;Nucl. Instrum. Methods Phys. Res., B,2010

3. Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons;Garcia Lopez;Nucl. Instrum. Methods Phys. Res. B,2016

4. Dynamic measurements of radiation-induced electrical-property modifications in CVD-SiC under fast-neutron irradiation;Tsuchiya;J. Nucl. Mater.,2014

5. Effects of 5.4MeV alpha-particle irradiation on the electrical properties of nickel Schottky diodes on 4H-SiC;Omotoso;Nucl. Instrum. Methods Phys. Res. B,2015

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of annealing treatment on performance of 4H–SiC SBD irradiated by heavy ions under room temperature and low temperature;Micro and Nanostructures;2024-10

2. Irradiation response of microstructure and mechanical properties of NbMoVCr multi-principal element alloy coatings;Surface and Coatings Technology;2024-09

3. Recovery at room temperature annealing on 4H–SiC SBDs by gamma irradiation;Materials Science in Semiconductor Processing;2024-06

4. Comparing the effect between room temperature and low temperature heavy ion irradiation by deep level transient spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-05

5. Effects of low fluence 212 MeV Ge swift heavy ion irradiation on the structural and optical properties of β-Ga2O3 epitaxial layers;Journal of Alloys and Compounds;2024-05

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3