Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC-Reference-Cited by-同舟云学术

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Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC

Published:2003-09 Issue: Volume:433-436 Page:371-374
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

David Marie-Laure¹,Alfieri Giovanni²,Monakhov Edouard V.²,Hallén Anders³,Barbot Jean François⁴,Svensson Bengt Gunnar²

Affiliation:

1. Laboratoire de Métallurgie Physique UMR 6630, SP2MI

2. University of Oslo

3. KTH Royal Institute of Technology

4. Institut Pprime CNRS - Université de Poitiers - ENSMA - UPR 3346

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.433-436.371.pdf

Reference9 articles.

1. A. Hallén, A. Henry, P. Pellegrino, B.G. Svensson and D. Åberg, Mat. Sci. Eng. B61-62 (1999), p.378.

2. D. Åberg, L. Storasta, A. Hallén and B.G. Svensson, Mat. Sci. Forum 353-356 (2001), p.443.

3. J.F. Ziegler, J.P. Biersack, and U. Littmark: The Stopping and Range of Ions in Solids (Pergamon, New York 1985).

4. D. Åberg, PhD thesis, Royal Institute of Technology, Stockholm, Sweden (2001).

5. O. Engström and A. Alm, Solid-State Electron. 21 (1978), p.1571.

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