Detection of minority carrier traps in p-type 4H-SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4867200
Reference21 articles.
1. Electrically active defects inn-type 4H–silicon carbide grown in a vertical hot-wall reactor
2. Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers
3. Deep levels created by low energy electron irradiation in 4H-SiC
4. Defect energy levels in hydrogen-implanted and electron-irradiated n-type 4H silicon carbide
5. Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC
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1. Majority and Minority Charge Carrier Traps in n-Type 4H-SiC Studied by Junction Spectroscopy Techniques;Electronic Materials;2022-03-14
2. A Study on the Isolation Ability of LOCal Oxidation of SiC (LOCOSiC) for 4H-SiC CMOS Process;IEEE Transactions on Electron Devices;2021-12
3. Atomistic Mechanism of 4 H - SiC/SiO2 Interface Carrier-Trapping Effects on Breakdown-Voltage Degradation in Power Devices;Physical Review Applied;2021-03-02
4. RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC;IEEE Transactions on Electron Devices;2020-08
5. Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes;Crystals;2019-06-27
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