Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2730569
Reference26 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. SiC Power Devices – An Overview
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4. Sublimation-Grown Semi-Insulating SiC for High Frequency Devices
5. Comparison of gold, platinum, and electron irradiation for controlling lifetime in power rectifiers
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