Isothermal annealing study of the EH1 and EH3 levels in n-type 4H-SiC
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
https://iopscience.iop.org/article/10.1088/1361-648X/abaeaf/pdf
Reference37 articles.
1. Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation
2. Carrier lifetime measurement in n− 4H-SiC epilayers
3. Deep level defects in electron-irradiated 4H SiC epitaxial layers
4. Deep levels created by low energy electron irradiation in 4H-SiC
5. Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide
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1. Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC;Journal of Applied Physics;2024-09-06
2. The effects of different anode manufacturing methods on deep levels in 4H-SiC p+n diodes;Journal of Applied Physics;2024-06-17
3. Electrically active defects induced by thermal oxidation and post-oxidation annealing of n-type 4H-SiC;Journal of Applied Physics;2024-05-09
4. Minority Carrier Traps Induced by Neutron Reactions with 4H-SiC;Defect and Diffusion Forum;2023-06-06
5. Optically detected magnetic resonance of silicon vacancies in 4H-SiC at elevated temperatures toward magnetic sensing under harsh environments;Journal of Applied Physics;2023-04-17
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