Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2740580
Reference17 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
3. Proceedings of International Symposium on Power Semiconductor Devices and ICs;Sugawara Y.,2004
4. Characterisation and Defects in Silicon Carbide
5. Time Resolved Spectroscopy of Defects in SiC
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