Carrier lifetime measurement in n− 4H-SiC epilayers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2837105
Reference50 articles.
1. "Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes
2. Statistics of the Recombinations of Holes and Electrons
3. Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths
4. Temperature Dependence of the Absorption Coefficient in 4H- and 6H-Silicon Carbide at 355 nm Laser Pumping Wavelength
5. Interpretation of Carrier Recombination Lifetime and Diffusion Length Measurements in Silicon
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