Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference6 articles.
1. Refractive Index and Low-Frequency Dielectric Constant of 6H SiC
2. Direct observation of conduction-band structure of4H- and6H−SiCusing ballistic electron emission microscopy
3. Ballistic electron emission microscopy study of Schottky contacts on 6H- and 4H-SiC
4. Nanometer-scale investigation of metal-SiC interfaces using ballistic electron emission microscopy
5. Low‐temperature photoluminescence studies of chemical‐vapor‐deposition‐grown 3C‐SiC on Si
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