Investigation of Two High-Temperature Bipolar Phenomena and Characteristics of 1.2-kV SiC Power Diodes for High-Temperature Applications
Author:
Affiliation:
1. State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an, China
Funder
National Science Fund for Distinguished Young Scholars
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Energy Engineering and Power Technology
Link
http://xplorestaging.ieee.org/ielx7/6245517/10419148/10296513.pdf?arnumber=10296513
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