An Analytical Switching Loss Model for SiC MOSFET Considering Temperature-Dependent Reverse Recovery Over an Extremely Wide High-Temperature Range
Author:
Affiliation:
1. State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, China
Funder
National Science Fund for Distinguished Young Scholars
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/63/10505873/10433688.pdf?arnumber=10433688
Reference35 articles.
1. Overview of Silicon Carbide Power Devices for Aircraft Electrical Systems
2. 300W 175○C Half Bridge Power Building Block with High Temperature SiC MOSFETs for Harsh Environment Applications
3. An All-SiC High-Frequency Boost DC–DC Converter Operating at 320 °C Junction Temperature
4. High-temperature electronics - a role for wide bandgap semiconductors?
5. Electronics and Packaging Intended for Emerging Harsh Environment Applications: A Review
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1. Hybrid Data-Driven and Mechanistic Modeling Approach for Power Module Rapid Thermal Analysis;IEEE Transactions on Power Electronics;2024-11
2. Characterization of Electro-Thermal Coupling Behaviors and Safe Operating Area of SiC MOSFET Modules in Pulsed Power Applications;IEEE Transactions on Power Electronics;2024-09
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