Temperature dependent trap characterisation and modelling of silicon carbide MOS capacitor-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Temperature dependent trap characterisation and modelling of silicon carbide MOS capacitor

Published:2024-04-07 Issue: Volume:6 Page:1-6
ISSN:
Container-title:2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
language:
Short-container-title:

Author:

Li Jinglin¹,Vollebregt Sten¹,Zhang Yaqian¹,Shekhar Aditya²,May Alexander³,Driel Willem D. Van¹,Zhang Guoqi¹

Affiliation:

1. Delft University of Technology,Department of Microelectronics,the Netherlands

2. Delft University of Technology,Energy conversion & Storage (DCE&S),DC systems,Netherlands

3. Fraunhofer Institute for Integrated Systems and Device Technology IISB,Erlangen,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10491281/10491408/10491433.pdf?arnumber=10491433

Reference15 articles.

1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

2. Investigation of Two High-Temperature Bipolar Phenomena and Characteristics of 1.2-kV SiC Power Diodes for High-Temperature Applications

3. 300W 175°C Half Bridge Power Building Block with High Temperature SiC MOSFETs for Harsh Environment Applications

4. An All-SiC High-Frequency Boost DC–DC Converter Operating at 320 °C Junction Temperature

5. Overview of Silicon Carbide Power Devices for Aircraft Electrical Systems

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP