In situ ellipsometry study of the kinetics of hydrogen plasma interaction with a-Si:H thin films: A particular temperature-dependence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3517495
Reference20 articles.
1. Etching and hydrogen diffusion mechanisms during a hydrogen plasma treatment of silicon thin films
2. Hydrogen-plasma etching of hydrogenated amorphous silicon: a study by a combination of spectroscopic ellipsometry and trap-limited diffusion model
3. Effect of doping on the amorphous to microcrystalline transition in a hydrogenated amorphous silicon under hydrogen plasma treatment
4. Ellipsometry investigation of the amorphous-to-microcrystalline transition in a-Si:H under hydrogen-plasma treatment
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1. Real-Time Ellipsometry at High and Low Temperatures;ACS Omega;2023-01-17
2. Spectroscopic ellipsometry investigation to study the microstructure evolution in boron-doped amorphous silicon films as a result of hydrogen dilution;SN Applied Sciences;2021-03-24
3. Etching of a-Si:H thin films by hydrogen plasma: A view from in situ spectroscopic ellipsometry;The Journal of Chemical Physics;2014-08-28
4. Temperature dependencies of hydrogen-induced blistering of thin film multilayers;Journal of Applied Physics;2014-05-07
5. Method for Improving the Stability of Gen 5 Silicon Thin-film Tandem Solar Cell;IEEE Journal of Photovoltaics;2013-10
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