Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3553443
Reference13 articles.
1. Temperature dependent and time-resolved photoluminescence studies of InAs self-assembled quantum dots with InGaAs strain reducing layer structure
2. Discrete energy level separation and the threshold temperature dependence of quantum dot lasers
3. Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer
4. Engineering carrier confinement potentials in 1.3-μm InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity
5. Moving Toward Nano-TCAD Through Multimillion-Atom Quantum-Dot Simulations Matching Experimental Data
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