Temperature dependent and time-resolved photoluminescence studies of InAs self-assembled quantum dots with InGaAs strain reducing layer structure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3159648
Reference54 articles.
1. Annealing effects on faceting of InAs∕GaAs(001) quantum dots
2. The role of p-doping in the gain dynamics of InAs/GaAs quantum dots at low temperature
3. Finite element analysis of conical, dome and truncated InAs quantum dots with consideration of surface effects
4. Upconversion electroluminescence in InAs quantum dot light-emitting diodes
5. Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics
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4. Impact of dislocations in InAs quantum dot with InGaAs strain-reducing layer structures on their optical properties;Japanese Journal of Applied Physics;2021-02-24
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