The role of p-doping in the gain dynamics of InAs/GaAs quantum dots at low temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3075855
Reference13 articles.
1. Temperature dependence of threshold current in p-doped quantum dot lasers
2. Temperature insensitive linewidth enhancement factor of p-type doped InAs∕GaAs quantum-dot lasers emitting at 1.3μm
3. Electron transport due to inhomogeneous broadening and its potential impact on modulation speed in p-doped quantum dot lasers
4. High-speed quantum dot lasers
5. Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers
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