Engineering carrier confinement potentials in 1.3-μm InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity-Reference-Cited by-同舟云学术

Engineering carrier confinement potentials in 1.3-μm InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity

Published:2003-11-03 Issue:18 Volume:83 Page:3716-3718
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu H. Y.,Sellers I. R.,Hopkinson M.,Harrison C. N.,Mowbray D. J.,Skolnick M. S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1622443

Reference19 articles.

1. GaAs-based long-wavelength lasers

2. High temperature performance of self-organised quantum dot laser with stacked p-doped active region

3. Continuous-wave low-threshold performance of 1.3-/spl mu/m InGaAs-GaAs quantum-dot lasers

4. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

5. Matrix effects on the structural and optical properties of InAs quantum dots

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