High temperature performance of self-organised quantum dot laser with stacked p-doped active region
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20020509?crawler=true&mimetype=application/pdf
Reference9 articles.
1. 1.3 μm room-temperature GaAs-based quantum-dot laser
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3. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
4. 1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition
5. High-temperature operating 1.3-μm quantum-dot lasers for telecommunication applications
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