Carrier dynamics of strain-engineered InAs quantum dots with (In)GaAs surrounding material-Reference-Cited by-同舟云学术

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Carrier dynamics of strain-engineered InAs quantum dots with (In)GaAs surrounding material

Published:2017-01-16 Issue:2 Volume:19 Page:025401
ISSN:2040-8978
Container-title:Journal of Optics
language:
Short-container-title:J. Opt.

Author:

Nasr O,Chauvin N,Alouane M H Hadj,Maaref H,Bru-Chevallier C,Sfaxi L,Ilahi B

Funder

Deanship of Scientific Research at King Saud University

Publisher

IOP Publishing

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/2040-8986/19/i=2/a=025401/pdf

Reference48 articles.

1. GaAs-based long-wavelength lasers

2. InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers

3. Intermediate-band solar cells: Influence of band formation on dynamical processes in InAs/GaAs quantum dot arrays

4. Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell

5. Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature Dependencies of Radiative and Nonradiative Carrier Lifetimes in InGaAs Quantum Well-Dots;Semiconductors;2023-11

2. The role and growth of strain – reducing layer by molecular -beam epitaxy in a multi – stack InAs/(In,Ga)As sub - monolayer quantum dot heterostructure;Optical Materials;2021-04

3. Impact of dislocations in InAs quantum dot with InGaAs strain-reducing layer structures on their optical properties;Japanese Journal of Applied Physics;2021-02-24

4. Realization of high-quality InGaAs/GaAs quantum dot growth on Ge substrate and improvement of optical property through ex-situ ion implantation;Journal of Luminescence;2020-07

5. Light Emitting Devices Based on Quantum Well-Dots;Applied Sciences;2020-02-04

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