InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1517750
Reference16 articles.
1. Photovoltaic quantum-dot infrared detectors
2. High-detectivity, normal-incidence, mid-infrared (λ∼4 μm)InAs/GaAs quantum-dot detector operating at 150 K
3. Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors
4. High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer
5. Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region
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