Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1485113
Reference13 articles.
1. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
2. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
3. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
4. MBE and MOCVD growth and properties of self-assembling quantum dot arrays in III-V semiconductor structures
5. 1.3 μm room-temperature GaAs-based quantum-dot laser
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1. Optical properties of InAs quantum dots embedded in InGaAs/AlGaAs/GaAs structures with different capping layers;Journal of Physics: Conference Series;2021-01-01
2. AlGaInAs capping layer impact on emission and structure of AlGaAs/GaAs quantum wells with InAs quantum dots;Materials Science in Semiconductor Processing;2019-02
3. Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers;Nanoscale Research Letters;2019-02-01
4. All-optical logic NOR gate using a single quantum-dot SOA-assisted an optical filter;Optical and Quantum Electronics;2018-02-24
5. Broadband Chirped InAs Quantum-Dot Superluminescent Light-Emitting Diodes With InxAl1-xAs Strain-Reducing Layers;IEEE Photonics Journal;2016-06
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