Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications
Author:
Funder
MEYS NPU
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots;Hospodková;J. Cryst. Growth,2008
2. Control of strain in GaSbAs/InAs/GaAs quantum dots;Haxha;J. Phys. Conf. Ser.,2010
3. Excitonic fine structure splitting in type-II quantum dots;Křápek;Phys. Rev. B,2015
4. Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots;Ulloa;J. Appl. Phys.,2007
5. Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer;Gu;J. Appl. Phys.,2011
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2. InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels;Microelectronic Engineering;2021-02
3. Quantum Dots;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30
4. Carrier dynamics of InAs quantum dots with GaAs1−xSbx barrier layers;Applied Physics Letters;2017-11-06
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