Carrier dynamics of InAs quantum dots with GaAs1−xSbx barrier layers-Reference-Cited by-同舟云学术

Carrier dynamics of InAs quantum dots with GaAs1−xSbx barrier layers

Published:2017-11-06 Issue:19 Volume:111 Page:191105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Guo Yingnan¹²,Liu Yao¹,Liang Baolai¹,Wang Ying¹,Guo Qinglin¹,Wang Shufang¹^ORCID,Fu Guangsheng¹,Mazur Yuriy I.³^ORCID,Ware Morgan E.³^ORCID,Salamo Gregory J.³

Affiliation:

1. College of Physics Science & Technology, Hebei University, Baoding 071002, People's Republic of China

2. Plasma Innovation Labs Pte. Ltd., 18 Nanyang Drive, Innovation Centre 02-235, 637723 Singapore

3. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

Funder

National Natural Science Foundation of US

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5003097

Reference32 articles.

1. An All-Optical Quantum Gate in a Semiconductor Quantum Dot

2. Electrically Driven Single-Photon Source

3. Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate

4. Strong Enhancement of Solar Cell Efficiency Due to Quantum Dots with Built-In Charge

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