InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels-Reference-Cited by-同舟云学术

InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels

Published:2021-02 Issue: Volume:238 Page:111514
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Golovynskyi Sergii,Datsenko Oleksandr I.,Seravalli Luca,Trevisi Giovanna,Frigeri Paola,Li Baikui,Lin Danying,Qu Junle

Funder

Ministry of Education and Science of Ukraine

Science, Technology and Innovation Commission of Shenzhen Municipality

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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4. Comparison of parameter variation of InAs quantum dots embedded in GaAs/Al0.30Ga0.70As structures with different capping/buffer quantum wells at annealing;Journal of Materials Science: Materials in Electronics;2023-05

5. Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots;Physical Review Materials;2022-11-30