Investigation of the energy spectra and the electron–hole alignment of the InAs/GaAs quantum dots with an ultrathin cap layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference21 articles.
1. Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm
2. Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
3. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
4. Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer
5. Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy;Semiconductors;2018-11-07
2. Indium (III) induces isolated mitochondrial permeability transition by inhibiting proton influx and triggering oxidative stress;Journal of Inorganic Biochemistry;2017-12
3. Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications;Journal of Crystal Growth;2017-04
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