Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm
Author:
Affiliation:
1. Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
Funder
The Strategic Research Infrastructure Project, MEXT, Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4913443
Reference21 articles.
1. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
2. Self-Formed $\bf In_{0.5}Ga_{0.5}As$ Quantum Dots on GaAs Substrates Emitting at $\bf 1.3\,{\mbi {\mu}}m$
3. Wavelength tuning of InAs quantum dots grown on (311)B InP
4. Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm
5. From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)
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