Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122576
Reference18 articles.
1. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
2. Low threshold, large To injection laser emission from (InGa)As quantum dots
3. Lasing at three-dimensionally quantum-confined sublevel of self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots by current injection
4. Room temperature lasing from InGaAs quantum dots
5. Room‐temperature lasing operation of a quantum‐dot vertical‐cavity surface‐emitting laser
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