60 A/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525 K-Reference-Cited by-同舟云学术

60 A/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525 K

Published:2020-05-26 Issue:21 Volume:116 Page:211102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ji Dong¹^ORCID,Ercan Burcu²,Benson Garrett³,Newaz A. K. M.³^ORCID,Chowdhury Srabanti¹²^ORCID

Affiliation:

1. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA

2. Department of Electrical and Computer Engineering, University of California, Davis, California 95616, USA

3. Department of Physics and Astronomy, San Francisco State University, San Francisco, California 94132, USA

Funder

NSF

Stanford University

ARL

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5140005

Reference33 articles.

1. S. Verghese , K. A. Mclntosh , R. J. Molnar , C.L. Chen , K. M. Molvar , I. Melngailis , and R. L. Aggarwal , in Device Research Conference (1998), pp. 54–55.

2. GaN avalanche photodiodes

3. Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes

4. Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates

5. Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates

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