Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3148812
Reference16 articles.
1. GaN MSM Photodetectors with an Unactivated Mg-Doped GaN Cap Layer and Sputtered ITO Electrodes
2. Solar-blind MSM-photodetectors based on AlxGa1−xN/GaN heterostructures grown by MOCVD
3. Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN
4. Fabrication and device characteristics of Schottky-type bulk GaN-based “visible-blind” ultraviolet photodetectors
5. Growth and characteristics of Ni-based Schottky-type AlxGa1−xN ultraviolet photodetectors with AlGaN∕GaN superlattices
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