Solar-blind MSM-photodetectors based on AlxGa1−xN/GaN heterostructures grown by MOCVD-Reference-Cited by-同舟云学术

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Solar-blind MSM-photodetectors based on AlxGa1−xN/GaN heterostructures grown by MOCVD

Published:2008-05 Issue:5 Volume:52 Page:618-624
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Averine S.V.,Kuznetzov P.I.,Zhitov V.A.,Alkeev N.V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Growth and applications of Group III-nitrides;Ambacher;J Phys D Appl Phys,1998

2. Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire;Egawa;Appl Phys Lett,2000

3. Low-noise photodetectors based on heterojunctions of AlGaN–GaN;Kuryatkov;Appl Phys Lett,2001

4. Gated photodetector based on GaN/AlGaN heterostructure field-effect transistor;Khan;Electron Lett,1995

5. Evaluation of Schottky contact parameters in metal–semiconductor–metal photodiode structures;Averine;Appl Phys Lett,2000

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