Research on reflection-mode InxGa1-xN thin film photocathode-Reference-Cited by-同舟云学术

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Research on reflection-mode InxGa1-xN thin film photocathode

Published:2023-03 Issue: Volume:255 Page:119597
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Zhangyang Xingyue,Liu Lei,Lu Feifei,Tian Jian

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference48 articles.

1. Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1-xN films;Angerer;Appl. Phys. Lett.,1997

2. Determination of band-gap bowing for AlxGa1-xN alloys;Katz;Phys. Status Solidi,2001

3. Band-gap and k.p. parameters for GaAlN and GaInN alloys;Pugh;J. Appl. Phys.,1999

4. Solar-blind AlGaN-based inverted heterostructure photodiodes;Tarsa;Appl. Phys. Lett.,2000

5. AlxGa1-xN-based deep-ultraviolet 320 × 256 focal plane array;Cicek;Opt. Lett.,2012

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1. Photoemission enhancement on In0.5Ga0.5N photocathode with nanocone emission surface;Optics & Laser Technology;2024-11

2. Emission surface improvement of In0.5Ga0.5N tilted nanowire array photocathode for vacuum electron sources;Materials Science and Engineering: B;2024-09

3. Study of Au nanoparticles adsorbed on InGaAs/InP thin films to improve optical absorption properties in the near-infrared band;Optical Review;2024-08-08

4. Gas adsorption on activated AlGaN photocathode: A first-principle study on charge redistribution, work function variation and emission performance attenuation;Surfaces and Interfaces;2024-08

5. Improved performance of transitional InGaN nanopencil photocathodes;Materials Science and Engineering: B;2024-08

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