Comparative study on structure and electronic properties of Al0.5Ga0.5N thin film and nanowire photocathode under surface oxidation-Reference-Cited by-同舟云学术

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Comparative study on structure and electronic properties of Al0.5Ga0.5N thin film and nanowire photocathode under surface oxidation

Published:2023-04 Issue: Volume:138 Page:113625
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Tian Jian,Liu Lei,Lu Feifei,Zhangyang Xingyue,Cheng Hongchang,Guo Xin

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference33 articles.

1. Control performance of a single-chip white light emitting diode by adjusting strain in InGaN underlying layer;Wang;Appl. Phys. Lett.,2009

2. Self-organized GaN quantum wire UV lasers;Choi;J. Phys. Chem. B,2003

3. Study of spectral response characteristic of negative electron affinity GaN photocathode;Qiao;Acta Phys. Sin.,2010

4. Development trends of GaN-based wide bandgap semiconductors: from solid state lighting to power electronic devices;Shen;Front. Optoelectron.,2015

5. Effect of residual gas on the optoelectronic properties of Mg-doped Ga0.75Al0.25N (0001) surface;Fang;Appl. Surf. Sci.,2021

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