Evaluation of Schottky contact parameters in metal–semiconductor–metal photodiode structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126948
Reference9 articles.
1. InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications
2. Two‐dimensional device modeling and analysis of GaInAs metal–semiconductor–metal photodiode structures
3. Low dark current GaAs metal-semiconductor-metal (MSM) photodiodes using WSi<inf>x</inf>contacts
4. Dark current characteristics of GaAs metal-semiconductor-metal (MSM) photodetectors
5. High temperature annealing behaviour of Schottky barriers on GaAs with gold and gold-gallium contacts
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