GaN avalanche photodiodes-Reference-Cited by-同舟云学术

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GaN avalanche photodiodes

Published:2000-02-14 Issue:7 Volume:76 Page:924-926
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Carrano J. C.,Lambert D. J. H.,Eiting C. J.,Collins C. J.,Li T.,Wang S.,Yang B.,Beck A. L.,Dupuis R. D.,Campbell J. C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.125631

Reference8 articles.

1. High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers

2. Avalanche breakdown and breakdown luminescence in p--n GaN diodes

3. Theory of Microplasma Instability in Silicon

4. Effect of Dislocations on Breakdown in Silicon p‐n Junctions

5. Improved device performance using a semi-transparent p-contact AlGaN/GaN heterojunction positive-intrinsic-negative photodiode

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1. Enhancing Linearity of Light Response in Avalanche Photodiodes by Suppressing Electrode Size Effect;Sensors;2024-05-24

2. 1.7-kV vertical GaN p-n diode with triple-zone graded junction termination extension formed by ion-implantation;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2023-12

3. Low-Temperature Geiger-Mode Characterization of a Gallium Nitride p-i-N Avalanche Photodiode;IEEE Journal of Quantum Electronics;2023-06

4. Ultraviolet Photodetectors: From Photocathodes to Low-Dimensional Solids;Sensors;2023-05-02

5. Numerical Simulation on the Effect of Operation Temperature on the Optical Transfer Characteristics for GaN/AlGaN SAM Avalanche Photodiodes;2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD);2022-09-12

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